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inchange semiconductor product specification silicon npn power transistors 2SC2788 description with to-3pn package high breakdown voltage fast switching speed wide area of safe operation applications for switching regulator applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(t a =25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 500 v v ceo collector-emitter voltage open base 400 v v ebo emitter-base voltage open collector 7 v i c collector current 8 a i cm collector current-peak 16 a i b base current 3 a t a =25 2.5 p c collector power dissipation t c =25 80 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-3pn) and symbol
inchange semiconductor product specification 2 silicon npn power transistors 2SC2788 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =10ma ;r be = 400 v v (br)cbo collector-base breakdown voltage i c =1ma ;i e =0 500 v v (br)ebo emitter-base breakdown voltage i e =1ma ;i c =0 7 v v ce (sat) collector-emitter saturation voltage i c =4a ;i b =0.8a 1.0 v v be (sat) base-emitter saturation voltage i c =4a ;i b =0.8a 1.5 v i cbo collector cut-off current v cb =400v ;i e =0 100 a i ebo emitter cut-off current v eb =5v; i c =0 100 a h fe-1 dc current gain i c =0.8a ; v ce =5v 15 50 h fe -2 dc current gain i c =4a ; v ce =5v 8 f t transition frequency i c =0.8a ; v ce =10v 20 mhz
inchange semiconductor product specification 3 silicon npn power transistors 2SC2788 package outline fig.2 outline dimensions

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